STUDY OF P-N JUNCTION & ENERGY BAND GAP

Principle and Working:
The slope of V-T curve used to measure the temperature coefficient of the junction voltage and the energy band gap is given by

Where V(T) - Voltage at given temperature, dV/dT - Slope of curve, for Si, m = 1.5, η=2 at 300K and for Ge, m = 2, η=1 at 300K, η - Material constant and q - charge of electron.

Exp-1 Determination of reverse saturation current.
Exp-2 Study of Energy Band Gap of p-n Junction.
Exp-3 Study of Junction capacitance.